2SC2814

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##
2SC2814
Silicon NPN Transistor
High frequency applications.

### The 2SC2814 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is designed for general purpose amplifier applications.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector-Base Voltage, VCBO | 30V
Collector-Emitter Voltage, VCEO | 20V
Emitter-Base Voltage, VEBO | 5V
Collector Current, IC | 30mA
Total Device Dissipation (TA = +25°C), PD | 150mW
Operating Junction Temperature, TJ | +125°C
Storage Temperature Range, Tstg | -55° to +125°C

Electrical Characteristics:
(TA = +25°C unless otherwise specified)

Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit
Forward Current Transfer Ratio | hFE | VCE = 6V, IC = 1mA | 40 | - | 270 |
Gain-Bandwidth Product | fT | IC = 1mA, VCE = 6V, | 200 | 230 | - | MHz
Power Gain | PG | VCE = 6V, IC = 1mA, f = 100MHz | - | 25 | - | dB
Noise Figure | NF | IC = 1mA, VCB = 6V, f = 100MHz | - | 3 | - | dB