2SC1969

RETOUR SOMMAIRE DES COMPOSANTS

RETOUR

##
2SC1969
Silicon NPN Transistor
Final RF Power Output

### The 2SC1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

| B C E

### Features:

- High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz)
- Ability to Withstand Infinite VSWR Load when Operated at:
  VCC = 16V, PO = 20W, f = 27MHz

### Application:

- 10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)

Collector-Emitter Voltage (RBE = Infinity), VCEO | 25V
Collector-Base Voltage, VCBO | 60V
Emitter-Base Voltage, VEBO | 5V
Collector Current, IC | 6A
Collector Power Dissipation (TA = +25°C), PD | 1.7W
Collector Power Dissipation (TC = +50°C), PD | 20W
Operating Junction Temperature, TJ | +150°C
Storage Temperature Range, Tstg | -55° to +150°C
Thermal Resistance, Junction-to-Case, RthJC | 6.25°C/W
Thermal Resistance, Junction-to-Ambient, RthJA | 73.5°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit
Collector-Base Breakdown Voltage | V(BR)CBO | IC = 1mA, IE = 0 | 60 | - | - | V
Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 10mA, RBE = Infinity | 25 | - | - | V
Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 5mA, IC = 0 | 5 | - | - | V
Collector Cutoff Current | ICBO | VCB = 30V IE = 0 | - | - | 100 | µA
Emitter Cutoff Current | IEBO | VEB = 4V, IC = 0 | - | - | 100 | µA
DC Forward Current Gain | hFE | VCE = 12V, IC = 10mA, Note 1 | 10 | 50 | 180 |
Power Output | PO | VCC = 12V, Pin = 1W, f = 27MHz | 16 | 18 | - | W
Collector Efficiency |  | 60 | 70 | - | %

Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.