KTC1006

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##
KTC1006
Silicon NPN Transistor

### The KTC1006 is a silicon NPN epitaxial planar type transistor designed for CB tranceiver TX driver amplifier application.

| E C B

### Features:

- High Power Gain
- Wide Area of Safe Operation.

### Application:

- Recommended for Driver Stage Application of AM Transmitter.

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)

Collector-Emitter Voltage (RBE = Infinity), VCEO | 80V
Collector-Base Voltage, VCBO | 80V
Emitter-Base Voltage, VEBO | 5V
Collector Current, IC | 800mA
Collector Power Dissipation (TC = +50°C), PD | 1W
Operating Junction Temperature, TJ | +150°C
Storage Temperature Range, Tstg | -55° to +150°C

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit
Collector Cutoff Current | ICBO | VCB = 60V IE = 0 | - | - | 0,1 | µA
Collector Cutoff Current | ICER | VCB = 80V RBE = 220ohm | - | - | 0,1 | µA
DC Forward Current Gain | hFE | VCE = 2V, IC = 150mA | 100 | - | - |
Transition Frequency | fT | VCE = 5V, IC = 500mA | - | 150 | - | MHz