2SC2094

RETOUR SOMMAIRE DES COMPOSANTS

RETOUR

##
2SC2094
Silicon NPN Transistor
Final RF Power Output in VHF band mobile radio application.

| E C E

### The 2SC2094 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers.

| E B E

### Features:

- High Power Gain: Gpe >/= 8,8dB (VCC = 13,5V, PO = 15W, f = 175MHz)
- Ability to Withstand Infinite VSWR Load when Operated at:
  VCC = 15,2V, PO = 18W, f = 175MHz

### Application:

- 10 to 14 Watt output linear power amplifiers in VHF band.

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)

Collector-Emitter Voltage (RBE = Infinity), VCEO | 17V
Collector-Base Voltage, VCBO | 40V
Emitter-Base Voltage, VEBO | 4,5V
Collector Current, IC | 3,5A
Collector Power Dissipation (TA = +25°C), PD | 2W
Collector Power Dissipation (TC = +50°C), PD | 30W
Operating Junction Temperature, TJ | +175°C
Storage Temperature Range, Tstg | -55° to +175°C
Thermal Resistance, Rth-c | 5°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit
Collector-Base Breakdown Voltage | V(BR)CBO | IC = 10mA, IE = 0 | 40 | - | - | V
Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 100mA, RBE = Infinity | 17 | - | - | V
Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 1mA, IC = 0 | 4,5 | - | - | V
Collector Cutoff Current | ICBO | VCB = 25V IE = 0 | - | - | 2 | mA
Emitter Cutoff Current | IEBO | VEB = 3V, IC = 0 | - | - | 0,5 | mA
DC Forward Current Gain | hFE | VCE = 10V, IC = 0,1A, Note 1 | 10 | 50 | 180 |
Power Output | PO | VCC = 13,5V, Pin = 2W, f = 175MHz | 15 | 16 | - | W
Collector Efficiency |  | 60 | 70 | - | %

Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.