KTC2078

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KTC2078
Silicon NPN Transistor
Final RF Power Output

### The KTC2078 is a silicon NPN triple diffused type transistor designed for CB tranceiver TX final amplifier application and HF transceiver application.

| B C E

### Features:

- High Power Gain
- Wide Area of Safe Operation.

### Application:

- Recommended for Output Stage Application of AM 4W Transmitter.

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)

Collector-Emitter Voltage (RBE = Infinity), VCEO | 80V
Collector-Base Voltage, VCBO | 80V
Emitter-Base Voltage, VEBO | 4V
Collector Current, IC | 4A
Collector Power Dissipation (TC = +50°C), PD | 10W
Operating Junction Temperature, TJ | +150°C
Storage Temperature Range, Tstg | -55° to +150°C

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit
Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 10mA, RBE = Infinity | 80 | - | - | V
Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 1mA, IC = 0 | 4 | - | - | V
Collector Cutoff Current | ICBO | VCB = 30V IE = 0 | - | - | 10 | µA
DC Forward Current Gain | hFE | VCE = 5V, IC = 0,5mA | 100 | - | 200 |
Transition Frequency | fT | VCE = 5V, IC = 500mA | 100 | - | - | MHz
Power Output | PO | VCC = 12V, Pin = 0,3W, f = 27MHz | 4 | - | - | W